[20p-S422-1~18] 13.5 Semiconductor devices and related technologies

[20p-S422-15] Analysis of NBTI Degradation in p-type Tunnel FETs

〇Wataru Mizubayashi¹, Takahiro Mori¹, Koichi Fukuda¹, Yuki Ishikawa¹, Yukinori Morita¹, Shinji Migita¹, Hiroyuki Ota¹, Yongxun Liu¹, Shinichi Ouchi¹, Junichi Tsukada¹, Hiromi Yamauchi¹, Takashi Matsukawa¹, Meishoku Masahara¹, Kazuhiko Endo¹ (1.AIST)

Keywords:Tunnel FETs,NBTI

In this work, we investigated the NBTI degradation of Si-channel p-type tunnel FETs (pTFETs) by simulation. It was clarified that the trap charge and interface state degradation located in the band-to-band tunneling (BTBT) region are the main causes of the V_th shift by NBTI, while those in the non BTBT region have little impact on the V_th shift.