Carrier density mitigation of MoS<sub>2</sub> film by S/Mo ratio increment

Takumi Ohashi; Kentaro Matsuura; Seiya Ishihara; Yusuke Hibino; Naomi Sawamoto; Kuniyuki Kakushima; Kazuo Tsutsui; Atsushi Ogura; Hitoshi Wakabayashi

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

[20p-S422-1~18] 13.5 Semiconductor devices and related technologies

Sun. Mar 20, 2016 1:45 PM - 6:30 PM S422 (S4)

Keiji Ikeda(TOSHIBA), Jiro Ida(Kanazawa Inst. of Tech.)

2:00 PM - 2:15 PM

[20p-S422-2] Carrier density mitigation of MoS₂ film by S/Mo ratio increment

〇Takumi Ohashi¹, Kentaro Matsuura¹, Seiya Ishihara², Yusuke Hibino², Naomi Sawamoto², Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Atsushi Ogura², Hitoshi Wakabayashi¹ (1.Tokyo Tech, 2.Meiji Univ.)

Keywords:MoS2,2D material,Sputtering

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Presentation information

[20p-S422-1~18] 13.5 Semiconductor devices and related technologies

[20p-S422-2] Carrier density mitigation of MoS2 film by S/Mo ratio increment

[20p-S422-2] Carrier density mitigation of MoS₂ film by S/Mo ratio increment