[20p-S422-1~18] 13.5 Semiconductor devices and related technologies

[20p-S422-5] Anomalous Interface Phase in the Channel of VO₂ Mott Transistors

〇Takeaki Yajima¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.Univ. of Tokyo)

Keywords:Mott transistor,VO2,metal-insulator transition

A Mott transistor is expected to be a low-voltage switching device, which uses a metal-insulator transition in the transistor channel. In this work, the characteristics of the VO₂ Mott transistor was found to be influenced by an abnormal "interface phase", in the analogy of interface trap states in conventional semiconductors.