[20p-S422-1~18] 13.5 Semiconductor devices and related technologies

[20p-S422-8] Numerical Analysis of discrete dopant effects on Tunnel FET

〇Hidehiro Asai¹, Shinji Migita¹, Junichi Hattori¹, Koichi Fukuda¹, Nobuyuki Sano² (1.AIST, 2.Tsukuba Univ.)

Keywords:Tunnel FET,discrete dopant,random variation

In this study, we numerically investigate the discrete dopant effects on drain current (I_d) vs. gate voltage (V_gs) curves of Tunnel FETs (TFETs) by TCAD simulation. We fix the number of discrete dopants and focus on the effects related to the "spatial distribution" of the dopants. In this presentation, we discuss the origin of the variation of the I_d -V_gs curves by comparing with the results on a homogeneous doping model.