2016年第63回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

13 半導体 » 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

[20p-S423-1~19] 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

2016年3月20日(日) 13:45 〜 18:45 S423 (南4号館)

東 清一郎(広島大)、原 明人(東北学院大)

17:15 〜 17:30

[20p-S423-14] High On-to-Off Ratio Ge n+p Junctions by Peripheral Passivation Control

〇(P)Liu Chi1、Ikegaya Hiroki1、Nishimura Tomonori1、Toriumi Akira1 (1.Univ. of Tokyo)

キーワード:Germanium Junction,Peripheral Passivation,On-to-Off Ratio

Germanium has been recognized as one of the most promising material for the next generation CMOS since the high carrier mobility. However, one critical problem is the large Ge junction leakage. Although many work has paid attention to the bulk leakage, as will be shown in this work, passivation of the Ge surface could also be important or even more. In our previous work, using Y2O3 as a passivation layer, on-to-off ratio of about 5×104 was achieved. In this work, 10%-Yttrium-doped GeO2 (YGO) will be used to passivate the Ge surface and n+p junctions with on-to-off ratio as high as about 107 will be presented.