[20p-S423-1~19] 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

▼ [20p-S423-14] High On-to-Off Ratio Ge n⁺p Junctions by Peripheral Passivation Control

〇(P)Liu Chi¹、Ikegaya Hiroki¹、Nishimura Tomonori¹、Toriumi Akira¹ (1.Univ. of Tokyo)

キーワード：Germanium Junction,Peripheral Passivation,On-to-Off Ratio

Germanium has been recognized as one of the most promising material for the next generation CMOS since the high carrier mobility. However, one critical problem is the large Ge junction leakage. Although many work has paid attention to the bulk leakage, as will be shown in this work, passivation of the Ge surface could also be important or even more. In our previous work, using Y₂O₃ as a passivation layer, on-to-off ratio of about 5×10⁴ was achieved. In this work, 10%-Yttrium-doped GeO₂ (YGO) will be used to passivate the Ge surface and n⁺p junctions with on-to-off ratio as high as about 10⁷ will be presented.