[20p-S611-1~17] 16.3 シリコン系太陽電池

▼ [20p-S611-11] Effect and Optimization of Chemical Cleaning before Deposition of Cat-CVD Passivation Films to Realize Extremely Low Surface Recombination Velocity on Flat and Textured Structures

〇(PC)Nguyen Cong Thanh¹、Koyama Koichi¹、Terashima Shigeki¹、Okamoto Chikao²、Sugiyama Shuichiro²、Ohdaira Keisuke¹、Matsumura Hideki¹ (1.JAIST (Japan Adv. Inst. Sci. & Tech.)、2.SHARP Corporation)

キーワード：surface passivation,surface cleaning,solar cell

We succeeded to obtain Cat-CVD SiN$ _x $/i-a-Si passivation which realizes carrier life time up to 11.2~ms on flat c-Si substrates with bulk carrier life times around 11.5 ms, and about 8~ms on 170~\textmu m-thick textured c-Si used for solar cells. This means that the maximum surface recombination velocity as low as 1.1~cm/s, evaluated under the assumption of no carrier recombination in bulk, is successfully obtained for textured c-Si by proper chemical cleaning and film deposition by Cat-CVD.