Direct Modulation (6 Gbps) in Quantum Dot Lasers on Silicon

YuanHsuan Jhang; Reio Mochida; Katsuaki Tanabe; Keizo Takemasa; Mitsuru Sugawara; Satoshi Iwamoto; Yasuhiko Arakawa

Presentation information

Oral presentation

3 Optics and Photonics » 3.15 Silicon photonics

[20p-S621-1~13] 3.15 Silicon photonics

Sun. Mar 20, 2016 1:45 PM - 5:30 PM S621 (S6)

Katsuya Oda(Hitachi R&D Group), Nobuaki Hatori(PETRA), Junichi Fujikata(PETRA)

1:45 PM - 2:00 PM

▲ [20p-S621-1] Direct Modulation (6 Gbps) in Quantum Dot Lasers on Silicon

〇YuanHsuan Jhang¹, Reio Mochida², Katsuaki Tanabe^2,3, Keizo Takemasa⁴, Mitsuru Sugawara⁴, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.IIS, The Univ. Tokyo, 2.NanoQuine, The Univ. Tokyo, 3.Kyoto Univ., 4.QD Laser, Inc)

Keywords:Lasers on Si,QD lasers,Wafer bonding

We demonstrated the first direct modulation experiment in QD lasers on silicon. The metal-bonded QD laser was continuous-wave pumped and operated with a bit rate of 6 Gbps.