Oral presentation

3 Optics and Photonics » 3.15 Silicon photonics

[20p-S621-1~13] 3.15 Silicon photonics

Sun. Mar 20, 2016 1:45 PM - 5:30 PM S621 (S6)

Katsuya Oda(Hitachi R&D Group), Nobuaki Hatori(PETRA), Junichi Fujikata(PETRA)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:45 PM - 2:00 PM

▲ [20p-S621-1] Direct Modulation (6 Gbps) in Quantum Dot Lasers on Silicon

〇YuanHsuan Jhang¹, Reio Mochida², Katsuaki Tanabe^2,3, Keizo Takemasa⁴, Mitsuru Sugawara⁴, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.IIS, The Univ. Tokyo, 2.NanoQuine, The Univ. Tokyo, 3.Kyoto Univ., 4.QD Laser, Inc)

2:00 PM - 2:15 PM

△ [20p-S621-2] Polarization dependent optical propagation characteristics of germanium waveguides

〇Tadashi Okumura¹, Katsuya Oda¹, Junichi Kasai¹, Misuzu Sagawa¹, Yuji Suwa¹ (1.Hitachi R&D Group)

2:15 PM - 2:30 PM

[20p-S621-3] Enhanced photoluminescence from n⁺-Ge by post-growth annealing

〇(M1)Naoki Higashitarumizu¹, Kazumi Wada¹, Yasuhiko Ishikawa¹ (1.Univ. of Tokyo)

2:30 PM - 2:45 PM

[20p-S621-4] Improving Crystallinity of Ge Waveguides by Epitaxial Lateral Overgrowth

〇Katsuya Oda¹, Tadashi Okumura¹, Jun-ichi Kasai¹, Satoshi Kako², Satoshi Iwamoto², Yasuhiko Arakawa² (1.Hitachi R&D Group, 2.Univ. of Tokyo)

2:45 PM - 3:00 PM

[20p-S621-5] Ultra-low threading dislocation density Ge film by lateral overgrowth on SiO₂

〇Motoki Yako¹, Kazumi Wada¹ (1.Univ. of Tokyo)

3:15 PM - 3:30 PM

[20p-S621-6] High-performance Ge-on-Si pin photodiodes using a laser annealing process (2)

〇Sho Nagatomo¹, Shinya Kikuta², Satohiko Hoshino², Yasuhiko Ishikawa¹ (1.Univ.Tokyo, 2.Tokyo Electron Ltd.)

3:30 PM - 3:45 PM

[20p-S621-7] Fabrication of Ge/SiGe Heterojunction Avalanche Photodiodes

〇Yuji Miyasaka¹, Tatsurou Hiraki², Kota Okazaki², Tai Tsuchizawa², Tsuyoshi Yamamoto², Kazumi Wada¹, Yasuhiko Ishikawa¹ (1.Univ. Tokyo, 2.NTT Device Technology Labs.)

3:45 PM - 4:00 PM

[20p-S621-8] High Speed Operation of Butt-Joint Waveguide-type Ge-PD with Lateral PIN Configuration

〇Takasi Simoyama¹, Shigekazu Okumura¹, Hideki Ono¹, Masahiko Imai¹, Yu Tanaka¹, Ken Morito¹ (1.PETRA)

4:00 PM - 4:15 PM

[20p-S621-9] Resonant electronic Raman transitions in tensile-strained Ge

〇(M2)Tomoaki Matsushita¹, Yuhsuke Yasutake^1,2, Satoshi Iba³, Hidekazu Saito³, Shinji Yuasa³, Susumu Fukatsu¹ (1.Univ. of Tokyo, 2.JST-PRESTO, 3.AIST)

4:30 PM - 4:45 PM

▲ [20p-S621-10] Theoretical analysis of optical gain in Ge_1-xSn_x/Ge quantum well on Ge-on-Si substrates

〇Guo-En Chang¹ (1.Nat. Chung Cheng Univ.)

4:45 PM - 5:00 PM

△ [20p-S621-11] Bandgap modulation in Ge wire due to uniaxial tensile strain induced by stress liner

〇Shogo Tanaka¹, Hiroshi Oka¹, Kohei Tominaga¹, Takashi Amamoto¹, Masahiro Koyama¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka univ.)

5:00 PM - 5:15 PM

▲ [20p-S621-12] GeSn/Ge multiple-quantum-well short-wave infrared photoconductors on silicon

Shao-Wei Chen¹, Chia-Ho Tsai¹, Mao-Cheng Weng¹, 〇Guo-En Chang¹ (1.Nat. Chung Cheng. Univ.)

5:15 PM - 5:30 PM

▲ [20p-S621-13] Photoluminescence from Ge_0.92Sn_0.08/Ge multiple-quantum-well on silicon substrates

Li-Chou Sun¹, 〇Guo-En Chang¹ (1.Nat. Chung Cheng. Univ.)

Session information

[20p-S621-1~13] 3.15 Silicon photonics

▲ [20p-S621-1] Direct Modulation (6 Gbps) in Quantum Dot Lasers on Silicon

△ [20p-S621-2] Polarization dependent optical propagation characteristics of germanium waveguides

[20p-S621-3] Enhanced photoluminescence from n⁺-Ge by post-growth annealing

[20p-S621-4] Improving Crystallinity of Ge Waveguides by Epitaxial Lateral Overgrowth

[20p-S621-5] Ultra-low threading dislocation density Ge film by lateral overgrowth on SiO₂

[20p-S621-6] High-performance Ge-on-Si pin photodiodes using a laser annealing process (2)

[20p-S621-7] Fabrication of Ge/SiGe Heterojunction Avalanche Photodiodes

[20p-S621-8] High Speed Operation of Butt-Joint Waveguide-type Ge-PD with Lateral PIN Configuration

[20p-S621-9] Resonant electronic Raman transitions in tensile-strained Ge

▲ [20p-S621-10] Theoretical analysis of optical gain in Ge_1-xSn_x/Ge quantum well on Ge-on-Si substrates

△ [20p-S621-11] Bandgap modulation in Ge wire due to uniaxial tensile strain induced by stress liner

▲ [20p-S621-12] GeSn/Ge multiple-quantum-well short-wave infrared photoconductors on silicon

▲ [20p-S621-13] Photoluminescence from Ge_0.92Sn_0.08/Ge multiple-quantum-well on silicon substrates

Authentication

Session information

[20p-S621-1~13] 3.15 Silicon photonics

▲ [20p-S621-1] Direct Modulation (6 Gbps) in Quantum Dot Lasers on Silicon

△ [20p-S621-2] Polarization dependent optical propagation characteristics of germanium waveguides

[20p-S621-3] Enhanced photoluminescence from n+-Ge by post-growth annealing

[20p-S621-4] Improving Crystallinity of Ge Waveguides by Epitaxial Lateral Overgrowth

[20p-S621-5] Ultra-low threading dislocation density Ge film by lateral overgrowth on SiO2

[20p-S621-6] High-performance Ge-on-Si pin photodiodes using a laser annealing process (2)

[20p-S621-7] Fabrication of Ge/SiGe Heterojunction Avalanche Photodiodes

[20p-S621-8] High Speed Operation of Butt-Joint Waveguide-type Ge-PD with Lateral PIN Configuration

[20p-S621-9] Resonant electronic Raman transitions in tensile-strained Ge

▲ [20p-S621-10] Theoretical analysis of optical gain in Ge1-xSnx/Ge quantum well on Ge-on-Si substrates

△ [20p-S621-11] Bandgap modulation in Ge wire due to uniaxial tensile strain induced by stress liner

▲ [20p-S621-12] GeSn/Ge multiple-quantum-well short-wave infrared photoconductors on silicon

▲ [20p-S621-13] Photoluminescence from Ge0.92Sn0.08/Ge multiple-quantum-well on silicon substrates

Authentication

[20p-S621-3] Enhanced photoluminescence from n⁺-Ge by post-growth annealing

[20p-S621-5] Ultra-low threading dislocation density Ge film by lateral overgrowth on SiO₂

▲ [20p-S621-10] Theoretical analysis of optical gain in Ge_1-xSn_x/Ge quantum well on Ge-on-Si substrates

▲ [20p-S621-13] Photoluminescence from Ge_0.92Sn_0.08/Ge multiple-quantum-well on silicon substrates