[20p-S621-1~13] 3.15 シリコンフォトニクス

▲ [20p-S621-12] GeSn/Ge multiple-quantum-well short-wave infrared photoconductors on silicon

Chen Shao-Wei¹、Tsai Chia-Ho¹、Weng Mao-Cheng¹、〇Chang Guo-En¹ (1.Nat. Chung Cheng. Univ.)

キーワード：Short-waveinfrared,quantum well,GeSn alloys

GeSn alloys have recently attracted increasing attention for Si-based short-wave infrared (SWIR) photodetectors for various applications such as telecommunications, imaging, and gas sensing. Introducing Sn into Ge can significantly lower the direct bandgap energy, extended the absorption edge of the material into longer wavelengths. This has led to the development of GeSn-based photodetectors that can operate in the SWIR region reaching beyond 2.2 μm. Here we present the growth, fabrication, and characterization of Ge_0.92Sn_0.08/Ge multiple quantum well (MQW) phoconductors on Si substrates .