[20p-S621-1~13] 3.15 シリコンフォトニクス

▲ [20p-S621-13] Photoluminescence from Ge_0.92Sn_0.08/Ge multiple-quantum-well on silicon substrates

Sun Li-Chou¹、〇Chang Guo-En¹ (1.Nat. Chung Cheng. Univ.)

キーワード：Photoluminescence,quantum well,GeSn alloys

GeSn material system has recently drawn a great deal of attention for efficient Si-based light emitters. By incorporating Sn into Ge to modulate the band structure, the energy band can be transferred from indirect to direct with a Sn content of 6-10%. As a result, efficient electron-hole recombination can occur to achieve stimulation emission in the material. Recently, enhanced photoluminescence (PL) from GeSn alloys has been observed. First lasing action at low temperature from direct bandgap GeSn alloys has been reported, but the threshold is too high to be acceptable. Thus it is desirable to reduce the threshold for practical applications. Here we present the growth and photoluminescence of low-dimensional GeSn/Ge multiple-quantum-well (MQW) on Si substrate as a first step for developing GeSn/Ge MQW lasers.