The 63rd JSAP Spring Meeting, 2016

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[21a-H101-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 21, 2016 9:00 AM - 12:00 PM H101 (H)

Takuji Hosoi(Osaka Univ.)

9:00 AM - 9:15 AM

[21a-H101-1] Angle-resolved Photoelectron Spectroscopy studies of initial stage of thermal oxidation on 4H-SiC (0001) on-Axis, 4° Off-Axis Substrates

〇Hitoshi Arai1, Ryoma Toyoda1, I Isohashi2, Yasuhisa Sano2, Hiroshi Nohira1 (1.Tokyo City Univ., 2.Osaka Univ.)

Keywords:4H-SiC,XPS,thermal oxidation