Evaluation of Electronic States of Thermally-grown SiO<sub>2</sub>/4H-SiC (II)

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 21, 2016 9:00 AM - 12:00 PM H101 (H)

Takuji Hosoi(Osaka Univ.)

9:15 AM - 9:30 AM

〇Hiromasa Watanabe¹, Akio Ohta¹, Nobuyuki Fujimura¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

Keywords:4H-SiC,XPS