The 63rd JSAP Spring Meeting, 2016

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[21a-H101-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 21, 2016 9:00 AM - 12:00 PM H101 (H)

Takuji Hosoi(Osaka Univ.)

9:30 AM - 9:45 AM

[21a-H101-3] Local atomic structure analysis of nitrogen at SiC(000-1)/SiO2 interface by photoelectron diffraction

〇daisuke mori1, Takayuki Hirose1, Yoshiki Oyama2, Fumihiko Matsui2 (1.Fuji Electric, 2.NAIST)

Keywords:SiC,interface