Low resistance Ti-Si-C ohmic contact formation by Laser annealing on 4H-SiC C face

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 21, 2016 9:00 AM - 12:00 PM H101 (H)

Takuji Hosoi(Osaka Univ.)

11:15 AM - 11:30 AM

〇Desilva Milantha¹, Teruhisa Kawasaki², Takamaro Kikkawa¹, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ. Nanodevice, 2.Sumitomo Heavy Industries Ltd.)

Keywords:SiC,Ohmic,Laser annealing