The 63rd JSAP Spring Meeting, 2016

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Oral presentation

15 Crystal Engineering » 15.7 Fundamentals of epitaxy

[21a-H112-1~2] 15.7 Fundamentals of epitaxy

Mon. Mar 21, 2016 9:00 AM - 9:30 AM H112 (H)

Shiro Tsukamoto(Anan Collage)

9:15 AM - 9:30 AM

[21a-H112-2] Theoretical study for misfit dislocation formation at InAs/GaAs(001) interface

〇RYO KAIDA1, Toru Akiyama1, Kohji Nakamura1, Tomonori Ito1 (1.Mie univ.)

Keywords:InAs/GaAs(001),wetting layer