RYO KAIDA

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Speaker, Author, Co-Author

Mon. Mar 21, 2016 9:00 AM - 9:30 AM H112 (H)

Oral presentation
| 15 Crystal Engineering
| 15.7 Fundamentals of epitaxy

[21a-H112-1~2] 15.7 Fundamentals of epitaxy

9:15 AM - 9:30 AM

[21a-H112-2] Theoretical study for misfit dislocation formation at InAs/GaAs(001) interface

〇RYO KAIDA¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (1.Mie univ.)