Reduction of dislocations in <em>c</em>-plane GaN crystals grown on point seeds with the Na-flux coalescence growth

Masayuki Imanishi; Takumi Yamada; Kosuke Murakami; Masatomo Honjo; Hiroki Imabayashi; Daisuke Matsuo; Mihoko Maruyama; Mamoru Imade; Masashi Yoshimura; Yoshiyuki Tsusaka; Junji Matsui; Yusuke Mori

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[21a-H121-1~11] 15.4 III-V-group nitride crystals

Mon. Mar 21, 2016 8:45 AM - 11:45 AM H121 (H)

Motoaki Iwaya(Meijo Univ.), Makoto Saito(Tohoku Univ.)

9:45 AM - 10:00 AM

△ [21a-H121-5] Reduction of dislocations in c-plane GaN crystals grown on point seeds with the Na-flux coalescence growth

〇Masayuki Imanishi¹, Takumi Yamada¹, Kosuke Murakami¹, Masatomo Honjo¹, Hiroki Imabayashi¹, Daisuke Matsuo¹, Mihoko Maruyama¹, Mamoru Imade¹, Masashi Yoshimura¹, Yoshiyuki Tsusaka², Junji Matsui³, Yusuke Mori¹ (1.Osaka Univ., 2.Univ. of Hyogo, 3.Nanotech. Lab.)

Keywords:GaN,Na-flux method,Synchrotron Radiation X-ray