The 63rd JSAP Spring Meeting, 2016

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[21a-H121-1~11] 15.4 III-V-group nitride crystals

Mon. Mar 21, 2016 8:45 AM - 11:45 AM H121 (H)

Motoaki Iwaya(Meijo Univ.), Makoto Saito(Tohoku Univ.)

10:00 AM - 10:15 AM

[21a-H121-6] Homoepitaxial Growth Using HVPE on High Quality GaN Substrates Prepared with Na-Flux Method and Multi-Point-Seeds Coalescence Technique

〇Takehiro Yoshida1, Masayuki Imanishi2, Toshio Kitamura1, Kenji Otaka1, Mamoru Imade2, Yusuke Mori2 (1.Sciocs, 2.Grad. Sch. of Eng., Osaka Univ.)

Keywords:Free-standing GaN substrate