[21a-H121-1~11] 15.4 III-V-group nitride crystals

[21a-H121-7] Effect of crystal plane of sapphire seed crystal on solution growth of AlN using Cr-Ni solvent

〇Shinichiro Kurosaka¹, Taka Narumi¹, Sakiko Kawanishi^2,3, Sasaki Hideaki², Takeshi Yoshikawa², Masafumi Maeda² (1.Univ. of Tokyo, 2.IIS, Univ. of Tokyo, 3.IMRAM, Tohoku Univ.)

Keywords:aluminum nitride,solution growth

AlN single crystal is expected to be a base material of deep-UV light emitting diode, and we were aiming for rapid growth at low temperature by a solution growth method using Cr-Ni solvent, which had large solubility of AlN. In this report, solution growth was conducted by a temperature difference method using c-plane, a-plane, r-plane and AlN-coated sapphire for a seed substrate. In conclusion, the growth rate at every seed substrates was higher than reported highest growth rates using Cu-Al solvent.