The 63rd JSAP Spring Meeting, 2016

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[21a-H121-1~11] 15.4 III-V-group nitride crystals

Mon. Mar 21, 2016 8:45 AM - 11:45 AM H121 (H)

Motoaki Iwaya(Meijo Univ.), Makoto Saito(Tohoku Univ.)

10:45 AM - 11:00 AM

[21a-H121-8] Characteristics of InGaN thin-film transistors on amorphous substrates

〇Atsushi Kobayashi1, Takeki Itoh1, Khe Shin Lye1, Kohei Ueno1, Jitsuo Ohta1,2, Hiroshi Fujioka1,3 (1.The Univ. of Tokyo, 2.JST-PRESTO, 3.JST-ACCEL)

Keywords:crystal growth