[21a-S011-1~12] 17.2 Graphene

[21a-S011-6] Electronic transport in graphene on hBN with topological defects

〇Tomoaki Kaneko^1,2, Takahisa Ohno^1,2,3 (1.NIMS, 2.MARCEED, 3.IIS, Univ. of Tokyo)

Keywords:graphene,hBN,DFT-NEGF

Hexagonal boron nitride (hBN) is good a substrate for graphene device, but such good properties can be observed only for high quality hBN. In the previous JSAP meeting, we reported the effect of defects (impurities and vacancies) in hBN on graphene using DFT-NEGF method. In this presentation, we shall report the effect of topological defects in hBN on graphene transport properties.