[21a-S222-1~12] 21.1 Joint Session K

[21a-S222-1] Evaluation of Surface Damaged Layer of Gallium Oxide Single-crystal Substrates

〇Shinya Watanabe¹, Kimiyoshi Koshi¹, Yu Yamaoka¹, Takekazu Masui¹, Akito Kuramata¹, Shigenobu Yamakoshi¹ (1.Tamura Corp.)

Keywords:Gallium Oxide,Surface Damaged Layer,X-ray reflection topography

We report on the damaged surface layer formed in grinding, lapping and polishing process of twin-free beta-gallium oxide single crystal substrates made by the edge-defined film-fed growth (EFG) method. We examined two samples, named A and B, by using X-ray reflection topography method. Sample A did not have a damaged surface layer, but sample B had. The factors needed for removing the surface damage layer will be discussed in the presentation.