Oral presentation

Joint Session K » Joint Session K

[21a-S222-1~12] 21.1 Joint Session K

Mon. Mar 21, 2016 9:00 AM - 12:15 PM S222 (S2)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[21a-S222-1] Evaluation of Surface Damaged Layer of Gallium Oxide Single-crystal Substrates

〇Shinya Watanabe¹, Kimiyoshi Koshi¹, Yu Yamaoka¹, Takekazu Masui¹, Akito Kuramata¹, Shigenobu Yamakoshi¹ (1.Tamura Corp.)

9:15 AM - 9:30 AM

[21a-S222-2] Observation of Grooves on (010) of as-grown β-Ga2O3 Single Crystals

〇(PC)Kenji Hanada¹, Tomoya Moribayashi¹, Kimiyoshi Koshi², Kouhei Sasaki², Akito Kuramata², Osamu Ueda³, Makoto Kasu¹ (1.Saga Univ., 2.Tamura Corp., 3.Kanazawa Inst. Tech.)

9:30 AM - 9:45 AM

[21a-S222-3] Observation of Etch Pits on (010) Surface of β-Ga2O3 Single Crystals

〇(PC)Kenji Hanada¹, Tomoya Moribayashi¹, Kimiyoshi Koshi², Kouhei Sasaki², Akito Kuramata², Osamu Ueda³, Makoto Kasu¹ (1.Saga Univ., 2.Tamura Corp., 3.Kanazawa Inst. Tech.)

9:45 AM - 10:00 AM

△ [21a-S222-4] Fabrication and Evaluation of Crystal Structure of α-(Al_xGa_1-x)₂O₃ Superlattice Buffer Layers

〇Riena Jinno¹, Takayuki Uchida¹, Kentaro Kaneko¹, Shizuo Fujita¹ (1.Kyoto Univ.)

10:00 AM - 10:15 AM

△ [21a-S222-5] Electronic structure analysis of α-(Al1-_xGa_x)₂O₃ thin films and band alignment analysis of α-(Al_1-xGa_x)₂O₃/ α-Ga₂O₃

〇Takayuki Uchida¹, Riena Jinno¹, syu Takemoto², Kentaro Kaneko¹, Shizuo Fujita¹ (1.Kyoto Univ., 2.kyouto Univ.)

10:15 AM - 10:30 AM

[21a-S222-6] Exciton-LO-Phonon Interaction in β-Ga₂O₃ Crystals

〇Takeyoshi Onuma^1,2, Shingo Saito², Kohei Sasaki^3,2, Ken Goto³, Tatekazu Masui³, Tomohiro Yamaguchi¹, Tohru Honda¹, Akito Kuramata³, Masataka Higashiwaki² (1.Kogakuin Univ., 2.NICT, 3.Tamura Corp.)

10:45 AM - 11:00 AM

[21a-S222-7] Crystal Orientation of β-Ga₂O₃ Films Formed on NiO and its Heterojunction

〇Shinji Nakagomi¹, Shohei Kubo¹, Yoshihiro Kokubun¹ (1.Ishinomaki Senshu Univ.)

11:00 AM - 11:15 AM

[21a-S222-8] Distribution of beta-Ga₂O₃ Single Crystal Schottky Barrier Diodes

〇Makoto Kasu¹, Kazuya Harada¹, Kenji Hanada¹, Toshiyuki Oishi¹ (1.Saga Univ.)

11:15 AM - 11:30 AM

[21a-S222-9] Growth of In₂O₃ by Halide Vapor Phase Epitaxy

〇Shiyu Numata¹, Rie Togashi¹, Ken Goto², Hisashi Murakami¹, Akito Kuramata², Shigenobu Yamakoshi², Yoshinao Kumagai¹ (1.Tokyo Univ. of Agri. and Tech., 2.Tamura Corp.)

11:30 AM - 11:45 AM

[21a-S222-10] Electrochromic properties of MBE grown single-crystalline WO₃ films

〇(M1)Takayuki Murayama¹, Wataru Kuwagata¹, Yoshiyuki Harada¹, Kazuto Koike¹, Shigehiko Sasa¹, Mitsuaki Yano¹, Katsuhiko Inaba², Shintaro Kobayashi² (1.Osaka Inst. of Tech., NMRC, 2.Rigaku Corp., X-ray Res. Lab.)

11:45 AM - 12:00 PM

△ [21a-S222-11] Amorphous oxide electrochromic device with thin film transistor structure

〇Takaki Onozato¹, Takayoshi Katase², Hiromichi Ohta² (1.Electronics for Informatics, Hokkaido Univ., 2.RIES, Hokkaido Univ.)

12:00 PM - 12:15 PM

[21a-S222-12] Growth of NiO Thin Films on Ga₂O₃ and its Applications to Heterojunction Diodes

〇Yoshihiro Kokubun¹, Shohei Kubo¹, Shinji Nakagomi¹ (1.Ishinomaki Senshu Univ.)

Session information

[21a-S222-1~12] 21.1 Joint Session K

[21a-S222-1] Evaluation of Surface Damaged Layer of Gallium Oxide Single-crystal Substrates

[21a-S222-2] Observation of Grooves on (010) of as-grown β-Ga2O3 Single Crystals

[21a-S222-3] Observation of Etch Pits on (010) Surface of β-Ga2O3 Single Crystals

△ [21a-S222-4] Fabrication and Evaluation of Crystal Structure of α-(Al_xGa_1-x)₂O₃ Superlattice Buffer Layers

△ [21a-S222-5] Electronic structure analysis of α-(Al1-_xGa_x)₂O₃ thin films and band alignment analysis of α-(Al_1-xGa_x)₂O₃/ α-Ga₂O₃

[21a-S222-6] Exciton-LO-Phonon Interaction in β-Ga₂O₃ Crystals

[21a-S222-7] Crystal Orientation of β-Ga₂O₃ Films Formed on NiO and its Heterojunction

[21a-S222-8] Distribution of beta-Ga₂O₃ Single Crystal Schottky Barrier Diodes

[21a-S222-9] Growth of In₂O₃ by Halide Vapor Phase Epitaxy

[21a-S222-10] Electrochromic properties of MBE grown single-crystalline WO₃ films

△ [21a-S222-11] Amorphous oxide electrochromic device with thin film transistor structure

[21a-S222-12] Growth of NiO Thin Films on Ga₂O₃ and its Applications to Heterojunction Diodes

Authentication

Session information

[21a-S222-1~12] 21.1 Joint Session K

△ [21a-S222-4] Fabrication and Evaluation of Crystal Structure of α-(AlxGa1-x)2O3 Superlattice Buffer Layers

△ [21a-S222-5] Electronic structure analysis of α-(Al1-xGax)2O3 thin films and band alignment analysis of α-(Al1-xGax)2O3/ α-Ga2O3

△ [21a-S222-11] Amorphous oxide electrochromic device with thin film transistor structure

Authentication

△ [21a-S222-4] Fabrication and Evaluation of Crystal Structure of α-(Al_xGa_1-x)₂O₃ Superlattice Buffer Layers

△ [21a-S222-5] Electronic structure analysis of α-(Al1-_xGa_x)₂O₃ thin films and band alignment analysis of α-(Al_1-xGa_x)₂O₃/ α-Ga₂O₃