[21a-S222-1~12] 21.1 Joint Session K

[21a-S222-8] Distribution of beta-Ga₂O₃ Single Crystal Schottky Barrier Diodes

〇Makoto Kasu¹, Kazuya Harada¹, Kenji Hanada¹, Toshiyuki Oishi¹ (1.Saga Univ.)

Keywords:gallium oxide,Schottky barrier diode

We fabricated Schottky barrier diodes on the entire beta-Ga2O3 crystal surface, and investigated distribuion of I-V characteristics.