The 63rd JSAP Spring Meeting, 2016

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[21a-S223-1~13] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 21, 2016 9:00 AM - 12:30 PM S223 (S2)

Takashi Suemasu(Univ. of Tsukuba), Yoshikazu Terai(Kyushu Inst. of Tech.)

11:45 AM - 12:00 PM

[21a-S223-11] Growth of Ga-Doped ZnO Nanowires on a Si Substrate by VLS Method

〇takaya nakane1, Shota Igawa1, Takeshi Ishiyama1 (1.Toyohashi Univ.)

Keywords:zinc oxide,nanowire