Poster presentation

[20p-P13-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

Sun. Mar 20, 2016 4:00 PM - 6:00 PM P13 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

[20p-P13-1] Fabrication of high-quality Er₂O₃ thin film using ion beam sputter deposition method

〇masaya fujita^1,2, Hidehito Asaoka², Kenji Yamaguchi² (1.Ibaraki Univ., 2.Japan Atomic Energy Agency)

4:00 PM - 6:00 PM

△ [20p-P13-2] Oxidation resistance of impurity doped Mg₂Si crystals grown from the melt

〇(B)Shu Konno¹, Tsubasa Otsubo¹, Kohei Nakano¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

4:00 PM - 6:00 PM

[20p-P13-3] Electrical and optical properties of Mg₂Si pn diodes fabricated by short-period annealing

〇Yuma Onizawa¹, Nobuhiko Hori¹, Akiyama Tomohiro¹, Esaka Humitaka², Udono Haruhiko¹ (1.Ibaraki Univ., 2.JAEA)

4:00 PM - 6:00 PM

△ [20p-P13-4] Characterization of purity Mg₂Si crystals grown by vertical Bridgman method

〇(B)Kohei Nakano¹, Tsubasa Otsubo¹, Shu Konno¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

4:00 PM - 6:00 PM

[20p-P13-5] Syntheses of Si-based Nanostructures using calcium disilicide as templates by citric acid, malic acid and EDTA treatments

〇Yuki Kumazawa¹, Kenta Sasaki², Xiang Meng³, Yuan Peiling³, Hirokazu Tatsuoka² (1.Fac.Eng.,Shizuoka Univ., 2.Grad.Sch.Eng.,Shizuoka Univ., 3.GSST,Shizuoka Univ.)

4:00 PM - 6:00 PM

[20p-P13-6] Synthesis of Si wires repeatedly treated in AgNO₃/HF solution

〇Makoto Nakayama¹, Suzuki Takanori¹, Tatsuoka Hirokazu¹ (1.Grad.Sch.Eng.,Shizuoka Univ.)

4:00 PM - 6:00 PM

[20p-P13-7] Ion channeling study of β-FeSi₂ /Si hetero-epitaxial structures

〇Yoshihito Maeda¹, Yosikazu Terai¹, Kazumasa Narumi² (1.Kyushu Ist. Tech., 2.JAEA)

4:00 PM - 6:00 PM

[20p-P13-8] Dependence of direct transition energy on growth temperature in β-FeSi₂ epitaxial films

〇Hiroaki Tsukamoto¹, Motoki Iinuma², Haruki Yamaguchi¹, Naoki Murakoso², Kazuki Yamasaki², Yoshikazu Terai^1,2 (1.Kagoshima Univ., 2.Kyushu Inst. of Tech.)

4:00 PM - 6:00 PM

[20p-P13-9] Investigation of impurity concentrations in β-FeSi₂ films grown by sputtering method

〇Tetsu Hattori¹, Takahiko Higashi¹, Shuya Ikeda², Kazuya Ogi², Yoshikazu Terai^1,2 (1.Kagoshima Univ., 2.Kyushu Inst. of Tech.)

4:00 PM - 6:00 PM

[20p-P13-10] Fabrication of Si-based heterojunction solar cells with semiconducting silicide BaSi₂

〇Daichi Tsukahara¹, Hiroki Takeuchi¹, Weijie Du¹, Ryota Takabe¹, Kaoru Toko¹, Noritaka Usami², Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Nagoya Univ.)

4:00 PM - 6:00 PM

[20p-P13-11] Formation of polycrystalline BaSi₂ thin films by RF sputtering

Seiya Yokoyama¹, Masami Mesuda², Taketo Kuramochi², Kaoru Toko¹, 〇Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Tosoh Corp.)

4:00 PM - 6:00 PM

[20p-P13-12] Electrical properties of nitrogen-doped FeSi₂ films prepared by sputtering

Ryuji Baba¹, Hirokazu Kishimoto¹, 〇Tsuyoshi Yoshitake¹ (1.Kyushu Univ.)

4:00 PM - 6:00 PM

[20p-P13-13] Hall factor for nearest-neighbor hopping conduction in p-type InP and GaN

〇Yasutomo Kajikawa¹ (1.Shimane Univ.)

4:00 PM - 6:00 PM

[20p-P13-14] Hall factor for nearest-neighbor hopping conduction in Mn-doped GaAs

〇Yasutomo Kajikawa¹ (1.Shimane Univ.)

Oral presentation

[21a-S223-1~13] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 21, 2016 9:00 AM - 12:30 PM S223 (S2)

Takashi Suemasu(Univ. of Tsukuba), Yoshikazu Terai(Kyushu Inst. of Tech.)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[21a-S223-1] [Young Scientist Presentation Award Speech] First-principle calculations about twin boundaries in BaSi₂ epitaxial film on Si(111)

〇Masakazu Baba¹, Masanori Kohyama², Kaoru Toko¹, Takashi Suemasu^1,3 (1.Univ. Tsukuba, 2.AIST, 3.JST-CREST)

9:15 AM - 9:30 AM

▲ [21a-S223-2] Defect Physics in BaSi₂absorber

〇(PC)Mukesh Kumar¹, Naoto Umezawa¹, Motoharu Imai¹ (1.Nat Inst. for Mat Sci)

9:30 AM - 9:45 AM

[21a-S223-3] Measurement of band alignment at a-Si/BaSi₂ interfaces using hard x-ray photoelectron
spectroscopy

〇Ryota Takabe¹, Hiroki Takeuchi¹, Weijie Du¹, Keita Ito^1,2,3, Kaoru Toko¹, Shigenori Ueda⁴, Akio Kimura⁵, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.JSPS, 3.Tohoku Univ., 4.NIMS, 5.Hiroshima Univ.)

9:45 AM - 10:00 AM

[21a-S223-4] Reduction of BaSi₂ surface contact resistance by inserted a-Si layers

〇Suguru Yachi¹, Hiroki Takeuchi¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu^1,2 (1.Univ. Tsukuba, 2.JST-CREST)

10:00 AM - 10:15 AM

[21a-S223-5] Investigation of p-type emitter layer materials for barium silicide thin film solor cells

〇(B)Kazuma Takahashi¹, Yoshihiko Nakagawa¹, Kosuke Hara², Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Nagoya Univ., 2.Yamanashi Univ.)

10:15 AM - 10:30 AM

△ [21a-S223-6] Study of band structure of Cr-doped AlN by photoelectron spectroscopy

〇(M1)Nobuyuki Tatemizo¹, Saki Sonoda¹, Hiroyuki Yamane², Kiyohisa Tanaka² (1.KIT, 2.IMS)

10:30 AM - 10:45 AM

△ [21a-S223-7] Structural Relationship with Electronic Properties of Octahedral Mo₆-Cluster Complex

〇(D)Norio Saito^1,2,3, Stephane Cordier^4,5, Wada Yoshiki^2,3, Ohsawa Takeo^2,3, Pierric Lemoine^4,5, Fabien Grasset^2,6, Jeffrey Cross S.¹, Naoki Ohashi^2,3,7 (1.Tokyo-Tech., 2.NIMS, 3.NIMS-SG-COE, 4.UMR6226, 5.UR1, 6.UMI3629, 7.MCES-Tokyo-Tech.)

11:00 AM - 11:15 AM

[21a-S223-8] Magnetic-Field Dependent Electron Transport of Fe₃Si Nanodots by Using a Magnetic AFM Probe

〇(DC)Hai Zhang¹, Yuusuke Mitsuyuki¹, Katsunori Makihara¹, Mitsuhisa Ikeda¹, Akio Ohta¹, Seiichi Miyazaki¹ (1.Nagoya University)

11:15 AM - 11:30 AM

[21a-S223-9] Fabrication of Fe/FeSi₂/Fe₃Si spin valve junctions by sputtering

Kazuhiro Nakashima¹, Kazuya Ishyibashi¹, Ken-ichiro Sakai², 〇Tsuyoshi Yoshitake¹ (1.Kyushu Univ., 2.NIT, Kurume Coll.)

11:30 AM - 11:45 AM

[21a-S223-10] Effects of structural disorder on optical properties of nano amorphous graphitic carbon nitrides

〇Atsushi Yamamoto¹, Masaaki Hirai², Nozomu Yasui², Kenichi Takarabe², Kiyoto Matsuishi¹ (1.Institute of Materials Science, University of Tsukuba, 2.Okayama University of Science)

11:45 AM - 12:00 PM

[21a-S223-11] Growth of Ga-Doped ZnO Nanowires on a Si Substrate by VLS Method

〇takaya nakane¹, Shota Igawa¹, Takeshi Ishiyama¹ (1.Toyohashi Univ.)

12:00 PM - 12:15 PM

[21a-S223-12] Investigation of the sensing mechanism in hydrogen sensors using semiconductor devices

〇Yoshihiro Irokawa¹ (1.NIMS)

12:15 PM - 12:30 PM

△ [21a-S223-13] Investigation on ac Pseudo-MOSFET technique for SOI substrates

〇Isao Yarita¹, Singo Sato¹, Yasuhisa Omura¹ (1.kansai Univ.)

Oral presentation

[21p-S223-1~17] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 21, 2016 1:30 PM - 6:00 PM S223 (S2)

Kenji Yamaguchi(JAEA), Kosuke Hara(Univ. of Yamanashi)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 1:45 PM

[21p-S223-1] Electronic strcture of Ba_1-xSr_xSi₂

〇Motoharu Imai¹, Mukesh Kumar¹, Naoto Umezawa¹ (1.NIMS)

1:45 PM - 2:00 PM

[21p-S223-2] Post-anneal Effects on Undoped BaSi₂ Evaporated Films

〇Takamichi Suhara^1,2, Koichi Murata², Aryan Navabi², Xiaoyu Che², Yoshihiko Nakagawa¹, Kosuke O. Hara³, Yasuyoshi Kurokawa¹, Takashi Suemasu⁴, Kang L. Wang², Noritaka Usami¹ (1.Nagoya Univ., 2.UCLA, 3.Univ. of Yamanashi, 4.Univ. of Tsukuba)

2:00 PM - 2:15 PM

[21p-S223-3] Effects of Rapid Deposition on the Structure and Properties of BaSi₂ Evaporated Films

〇Kosuke Hara¹, Cham Thi Trinh², Yasuyoshi Kurokawa², Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Takashi Suemasu³, Noritaka Usami² (1.Univ. Yamanashi, 2.Nagoya Univ., 3.Univ. Tsukuba)

2:15 PM - 2:30 PM

[21p-S223-4] Surface treatment and characterizations of Na doped type II clathrate films

〇Nanto Sugii¹, Hiroyuki Manjo¹, Tetsuya Mukai¹, Kazushi Sone¹, Fumitaka Ohashi¹, Tamio Iida², Tetsuji Kume¹, Himanshu Shekhar Jha¹, Shuichi Nonomura¹ (1.Gifu univ., 2.NIT Gifu)

2:30 PM - 2:45 PM

[21p-S223-5] Photogenerated carrier lifetimes and defect state density in nano-scale structural defects on a semiconductor surface

〇Keiki Fukumoto¹, Ken Onda², Shin-ya Koshihara² (1.KEK, 2.Tokyo Inst.)

2:45 PM - 3:00 PM

▲ [21p-S223-6] Photoresponse property of BaSi₂ film grown on Si substrate by vacuum evaporation

〇(P)Cham Thi Trinh¹, Yoshihiko Nakagawa¹, Kosuke O. Hara², Ryota Takabe³, Takashi Suemasu³, Noritaka Usami¹ (1.Nagoya Univ, 2.Univ. of Yamanashi, 3.Univ. of Tsukuba)

3:00 PM - 3:15 PM

▲ [21p-S223-7] Minority-carrier lifetime of BaSi₂formed on various multicrystalline Si substrates

〇YUNPENG LI¹, Cham Thi Trinh², Ryota Takabe¹, Kaoru Toko¹, Takashi Sekiguchi³, Noritaka Usami², Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Nagoya Univ., 3.NIMS)

3:15 PM - 3:30 PM

[21p-S223-8] Analysis of vibrational modes in BaSi₂ by polarized Raman spectra

〇Haruki Yamaguchi¹, Naoki Murakoso², Kazuki Yamasaki², Sumito Ogata¹, Hiroaki Tsukamoto¹, Takashi Suemasu³, Yoshikazu Terai^1,2 (1.Kagoshima Univ., 2.Kyushu Inst. of Tech., 3.Univ. of Tsukuba)

3:45 PM - 4:00 PM

[21p-S223-9] Raman scattering studies of strained Ge films on Si substrates

〇(B)Shunya Sakai¹, Kazuya Yamamura¹, Hiroshi Nishigaki¹, Noriyuki Hasuike¹, Hiroshi Harima¹, Woo Sik Yoo² (1.Kyoto Inst.Tech., 2.Wafer Masters, Inc.)

4:00 PM - 4:15 PM

▲ [21p-S223-10] Effects of pulse laser annealing on the crystallinity and electrical properties of B-doped BaSi₂ epitaxial thin films

〇(B)Emha Bayu Miftahullatif¹, H. Urai¹, Daichi Tsukahara¹, Kaoru Toko¹, Tetsuya Makimura¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

4:15 PM - 4:30 PM

[21p-S223-11] Growth-orientation dependence of Raman shifts in β-FeSi₂ epitaxial films

〇Kazuki Yamasaki¹, Haruki Yamaguchi², Yoshikazu Terai^1,2 (1.Kyushu Inst. of Tech., 2.Kagoshima Univ.)

4:30 PM - 4:45 PM

[21p-S223-12] Effect of Annealing on Structural Properties of Silicon Implanted by Neon Ion

〇Hitoe Habuchi¹, Atsushi Kitagawa¹, Kosuke Sonohara¹, Tamio Iida¹, Fumitaka Ohashi², Takayuki Ban², Tetsuji Kume², Shuichi Nonomura² (1.NIT, Gifu Coll., 2.Gifu Univ.)

4:45 PM - 5:00 PM

[21p-S223-13] Photoluminescence properties of post-annealed β-FeSi₂ films

〇Kensuke Akiyama^1,3, Yoshihisa Matsumoto¹, Takanori Kiguchi², Hiroshi Funakubo³ (1.Kanagawa Ind.Tec.Cen., 2.IMR Tohoku Univ., 3.Tokyo Inst. Tech.)

5:00 PM - 5:15 PM

[21p-S223-14] Energetic consideration of compounds formed at Mg₂Si-Ni electrode

〇Yoji Imai¹, Hiroharu Sugawara², Yoshihisa Mori³, Shigeyuki Nakamura⁴, Ken-ichi Takarabe³ (1.AIST, 2.Tokyo Metro. Univ., 3.Okayama Univ. Sci., 4.Tsuyama Natl. Col. Tech.)

5:15 PM - 5:30 PM

[21p-S223-15] Influence of shape and purity of raw materials and halogen treatment of liquid encapsulant on Mg₂Si crystal growth by vertical gradient freezing method

〇(M1)hiroki wada¹, hiroki syono¹, hiroshi katsumata¹, shiro sakuragi² (1.Meiji Univ., 2.Union Materials Inc.)

5:30 PM - 5:45 PM

[21p-S223-16] Coherent interface structure and electronic and magnetic properties of MgO/Mg₂Si/MgB₂ nanocomposites

Katsuya Ueno¹, Yukihito Nagashima², Yusuke Seto¹, Megumi Matsumoto¹, Takahiro Sakurai¹, Hithoshi Ohta¹, 〇Takashi Uchino¹ (1.Kobe Univ., 2.Nippon Sheet Glass)

5:45 PM - 6:00 PM

[21p-S223-17] Observation of grain size in single-phase MnSi_1.75-x grown using Ga solvent

〇shunpei hori¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[20p-P13-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

△ [20p-P13-2] Oxidation resistance of impurity doped Mg2Si crystals grown from the melt

△ [20p-P13-4] Characterization of purity Mg2Si crystals grown by vertical Bridgman method

[21a-S223-1~13] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [21a-S223-2] Defect Physics in BaSi2 absorber

△ [21a-S223-6] Study of band structure of Cr-doped AlN by photoelectron spectroscopy

△ [21a-S223-7] Structural Relationship with Electronic Properties of Octahedral Mo6-Cluster Complex

△ [21a-S223-13] Investigation on ac Pseudo-MOSFET technique for SOI substrates

[21p-S223-1~17] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [21p-S223-6] Photoresponse property of BaSi2 film grown on Si substrate by vacuum evaporation

▲ [21p-S223-7] Minority-carrier lifetime of BaSi2 formed on various multicrystalline Si substrates

▲ [21p-S223-10] Effects of pulse laser annealing on the crystallinity and electrical properties of B-doped BaSi2 epitaxial thin films

Authentication

△ [20p-P13-2] Oxidation resistance of impurity doped Mg₂Si crystals grown from the melt

△ [20p-P13-4] Characterization of purity Mg₂Si crystals grown by vertical Bridgman method

▲ [21a-S223-2] Defect Physics in BaSi₂absorber

△ [21a-S223-7] Structural Relationship with Electronic Properties of Octahedral Mo₆-Cluster Complex

▲ [21p-S223-6] Photoresponse property of BaSi₂ film grown on Si substrate by vacuum evaporation

▲ [21p-S223-7] Minority-carrier lifetime of BaSi₂formed on various multicrystalline Si substrates

▲ [21p-S223-10] Effects of pulse laser annealing on the crystallinity and electrical properties of B-doped BaSi₂ epitaxial thin films