[20p-P13-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

[20p-P13-12] Electrical properties of nitrogen-doped FeSi₂ films prepared by sputtering

Ryuji Baba¹, Hirokazu Kishimoto¹, 〇Tsuyoshi Yoshitake¹ (1.Kyushu Univ.)

Keywords:iron disilicide,nitrogen incorporation,nanocrystalline

Effects of nitrogen incorporation on electrical and optical properties of nanocrystalline FeSi₂ films prepared by sputtering were investigated.