[20p-P13-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

[20p-P13-13] Hall factor for nearest-neighbor hopping conduction in p-type InP and GaN

〇Yasutomo Kajikawa¹ (1.Shimane Univ.)

Keywords:nearest-neibor hopping conduction,impurity-band conduction,Hall factor

The experimental data of the Hall-effect measurements on p-type InP and GaN have been analyzed with assuming that the Hall factor for nearest-neibor hopping conduction depends on temperature as A_ib=(k_BT/J)exp(T_0H/T). As a result, in spite of hopping conduction of holes in an impurity band of an acceptor level, the experimental data of the Hall-effect measurements on Mg-doped InP and GaN have been well reproduced by the fits with negative values of the Hall factor for the impurity-band conduction.