[20p-P13-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

[20p-P13-14] Hall factor for nearest-neighbor hopping conduction in Mn-doped GaAs

〇Yasutomo Kajikawa¹ (1.Shimane Univ.)

Keywords:nearest-neibor hopping conduction,impurity-band conduction,Hall factor

The experimental data of the Hall-effect measurements on Mn-doped GaAs have been analyzed with assuming that the Hall factor for nearest-neibor hopping conduction depends on temperature as A_ib=(k_BT/J)exp(T_0H/T). As a result, the acceptor concentrations obtained in the conventional analysis have been proved to be larger than the true values by several ten times.