The 63rd JSAP Spring Meeting, 2016

Presentation information

Print

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[21p-S223-1~17] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 21, 2016 1:30 PM - 6:00 PM S223 (S2)

Kenji Yamaguchi(JAEA), Kosuke Hara(Univ. of Yamanashi)

4:00 PM - 4:15 PM

▲ [21p-S223-10] Effects of pulse laser annealing on the crystallinity and electrical properties of B-doped BaSi2 epitaxial thin films

〇(B)Emha Bayu Miftahullatif1, H. Urai1, Daichi Tsukahara1, Kaoru Toko1, Tetsuya Makimura1, Takashi Suemasu1 (1.Univ. of Tsukuba)

Keywords:semiconductor,silicide semiconductor,laser annealing