[20p-P13-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

[20p-P13-7] Ion channeling study of β-FeSi₂ /Si hetero-epitaxial structures

〇Yoshihito Maeda¹, Yosikazu Terai¹, Kazumasa Narumi² (1.Kyushu Ist. Tech., 2.JAEA)

Keywords:beta-FeSi2,ion channeling,hetero-epitaxial growth

Epitaxy of β-FeSi₂/Si(111) hetero-stuctures has been investigated by ion channeling. Axial ion channeling along Si<111> directions was observed and the average atomic displacement deduced from the minimum yield at the interface was very large. It is because atomic arrangement in β-FeSi₂ is different from that in Si, tilt of crystal axes may take place, or in-plain mosaic structures may form.