[20p-P13-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

[20p-P13-8] Dependence of direct transition energy on growth temperature in β-FeSi₂ epitaxial films

〇Hiroaki Tsukamoto¹, Motoki Iinuma², Haruki Yamaguchi¹, Naoki Murakoso², Kazuki Yamasaki², Yoshikazu Terai^1,2 (1.Kagoshima Univ., 2.Kyushu Inst. of Tech.)

Keywords:silicide