The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[21p-S223-1~17] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 21, 2016 1:30 PM - 6:00 PM S223 (S2)

Kenji Yamaguchi(JAEA), Kosuke Hara(Univ. of Yamanashi)

2:00 PM - 2:15 PM

[21p-S223-3] Effects of Rapid Deposition on the Structure and Properties of BaSi2 Evaporated Films

Kosuke Hara1, Cham Thi Trinh2, Yasuyoshi Kurokawa2, Keisuke Arimoto1, Junji Yamanaka1, Kiyokazu Nakagawa1, Takashi Suemasu3, Noritaka Usami2 (1.Univ. Yamanashi, 2.Nagoya Univ., 3.Univ. Tsukuba)

Keywords:Barium silicide,Solar cell,Thermal evaporation

We have investigated the effects of deposition rate on carrier density and structure of BaSi2 evaporated films. It has been found by Hall measurement that electron density decreases from 1019 cm−3 to 1017 cm−3 by increasing the deposition rate. At the same time, the full width of half maximum of the Raman scattering band decreases, suggesting that majority carrier, electron, in BaSi2 evaporated films derives from crystal defects.