[21a-S223-1~13] 13.2 Exploratory Materials, Physical Properties, Devices

△ [21a-S223-13] Investigation on ac Pseudo-MOSFET technique for SOI substrates

〇Isao Yarita¹, Singo Sato¹, Yasuhisa Omura¹ (1.kansai Univ.)

Keywords:pseudo-MOS,SOI substrate,ac signal analysis

It is always well known that the pseudo-MOS tecnique is applicable to the evaluation of the SOI substrate. However, the dc technique was only applied to the evaluation. In this paper, we challenged how the ac technique is powerful to extract some physical parameters of SOI substrates.
By assuming the equivalent circuit, we successfully extracted some parameters of the substrate.