The 63rd JSAP Spring Meeting, 2016

Presentation information

Poster presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[20p-P13-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

Sun. Mar 20, 2016 4:00 PM - 6:00 PM P13 (Gymnasium)

4:00 PM - 6:00 PM

[20p-P13-2] Oxidation resistance of impurity doped Mg2Si crystals grown from the melt

〇(B)Shu Konno1, Tsubasa Otsubo1, Kohei Nakano1, Haruhiko Udono1 (1.Ibaraki Univ.)

Keywords:thermoelectric,magnesium silicide