[21a-S422-1~10] 13.5 Semiconductor devices and related technologies

[21a-S422-5] [Silicon Technology Division Award Speech] Electric tuning of direct-indirect optical transitions in silicon

〇Jinichiro Noborisaka¹, Katsuhiko Nishiguchi¹, Akira Fujiwara¹ (1.NTT BRL)

Keywords:Silicon,Light emission,Valley splitting

We report the electrical tuning of the direct/indirect band optical transition in silicon. A special Si/SiO₂ interface formed by high-temperature annealing that shows stronger valley coupling enables us to demonstrate the electrical tuning of phononless direct optical transition. By controlling the gate field, its strength can be electrically tuned to 16 times that of the indirect transition, which is at least 100 times larger than the weak direct transition in bulk silicon.