[21a-S422-1~10] 13.5 Semiconductor devices and related technologies

△ [21a-S422-7] Compressively-strained ultra-thin body Ge-OI structure fabricated by Ge condensation method with reduced temperature cycles

〇Wukang Kim^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.The Univ. of Tokyo, 2.JST-CREST)

Keywords:Ge condensation,Strain,Ge