[21a-S422-1~10] 13.5 デバイス／集積化技術

▼ [21a-S422-8] Realization of Ge n- and p-MOSFETs by using low thermal budget ionimplantation after germanidation technique (< 400 °C)

〇(P)CHANG WENHSIN¹、Ota Hiroyuki¹、Maeda Tatsuro¹ (1.AIST)

キーワード：Ge,MOSFET,CMOS