[21a-W241-1~12] 10.1 Emerging materials in spintronics and magnetics (excluding semiconductors)

▼ [21a-W241-12] Fabrication of L1₀-Mn_1-xCo_xAl Thin Films for Magnetic Tunnel Junctions

〇Kenta Watanabe¹, Mikihiko Oogane¹, Miho Kubota¹, Yasuo Ando¹ (1.Tohoku Univ.)

Keywords:Ordered alloys

Magnetic materials using the ferromagnetic layer in STT-MRAM are required a high magneto-crystalline anisotropy (K_u), a low gilbert damping constant (a) and a low saturation magnetization (M_s). We focus L1₀-MnAl alloy with a high K_u (1.5×10⁷ erg/cc), a low a (0.006) and a small M_s (550 emu/cc). According to previous reports, (Mn-Co)-Al alloys with a few % Co atoms were easily crystalized to L1₀ structure in comparison with Mn-Al binary alloys. In this study, we have investigated the structural and magnetic properties in Mn_1-xCo_xAl thin films with various Co content (x) to apply them to ferromagnetic electrodes of MTJs.