The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

9 Applied Materials Science » 9.4 Thermoelectric conversion

[21a-W323-1~10] 9.4 Thermoelectric conversion

Mon. Mar 21, 2016 9:30 AM - 12:15 PM W323 (W2・W3)

Mikio Koyano(JAIST), Yuzuru Miyazaki(Tohoku Univ.)

10:45 AM - 11:00 AM

[21a-W323-5] Thermoelectric properties of V-doped MnSiγ synthesized by solution growth

〇(M1)HARUKI HAMADA1, Kei Hayashi1, Yuzuru Miyazaki1 (1.Tohoku Univ.)

Keywords:Thermoelectrics,Higher Manganese Silicides

MnSiγ is known as a p-type thermoelectric material. In general, MnSiγ synthesized by solution growth has layered MnSi precipitates perpendicular to c-axis, and such the precipitates work as defects and deteriorate electrical conductivity. In the present study, we have discovered that the V-substitution for Mn sites dissipates the precipitates in bulk MnSiγ and hence significantly improve the thermoelectric power factor, from 1.12 W/mK-2 (x=0) to 2.33 W/mK-2 (x=0.02) at 900K, of MnSiγ.