9:00 AM - 9:15 AM
[21a-W541-1] Study of forward-current crowded region in p-n junction diodes on free-standing GaN substrate
Keywords:free-standing GaN substrate,p-n junction diodes
Oral presentation
13 Semiconductors » 13.8 Compound and power electron devices and process technology
Mon. Mar 21, 2016 9:00 AM - 12:15 PM W541 (W5)
Tetsuya Suemitsu(Tohoku Univ.)
9:00 AM - 9:15 AM
Keywords:free-standing GaN substrate,p-n junction diodes