Kentarou Hayashi

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Speaker, Author, Co-Author

Mon. Mar 21, 2016 9:00 AM - 12:15 PM W541 (W5)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[21a-W541-1~12] 13.8 Compound and power electron devices and process technology

9:00 AM - 9:15 AM

[21a-W541-1] Study of forward-current crowded region in p-n junction diodes on free-standing GaN substrate

〇Kentarou Hayashi¹, Hiroshi Ohta¹, Naoki Kaneda², Fumimasa Horikiri³, Yoshinobu Narita³, Takehiro Yoshida³, Tomoyoshi Mishima¹, Tohru Nakamura¹ (1.Hosei Univ., 2.Quantum Spread, 3.Sciocs)

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