Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[21a-W541-1~12] 13.8 Compound and power electron devices and process technology

Mon. Mar 21, 2016 9:00 AM - 12:15 PM W541 (W5)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[21a-W541-1] Study of forward-current crowded region in p-n junction diodes on free-standing GaN substrate

〇Kentarou Hayashi¹, Hiroshi Ohta¹, Naoki Kaneda², Fumimasa Horikiri³, Yoshinobu Narita³, Takehiro Yoshida³, Tomoyoshi Mishima¹, Tohru Nakamura¹ (1.Hosei Univ., 2.Quantum Spread, 3.Sciocs)

9:15 AM - 9:30 AM

[21a-W541-2] Characterization of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates (2) --Effect of surface treatments--

〇Moe Naganawa¹, Toshichika Aoki¹, Tomoyoshi Mishima², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hosei Univ.)

9:30 AM - 9:45 AM

[21a-W541-3] Displacement current of Au/p-type diamond Schottky contacts
- Compared with p-type GaN Schottky contacts -

〇Kenji Shiojima¹, Toshichika Aoki¹, Tokuyuki Teraji², Yasuo Koide² (1.Univ. of Fukui, 2.NIMS)

9:45 AM - 10:00 AM

[21a-W541-4] Mapping of Ag/n-GaN Schottky contacts fabricated by printing of Ag nanoink (2)

〇Masato Shingo¹, Takafumi Ito¹, Yukiyasu Kashiwagi², Tasuku Shigemune³, Atsushi Koizumi³, Takanori Kojima³, Masashi Saitoh², Kimihiro Matsukawa², Yasufumi Fujiwara³, Kenji Shiojima¹ (1.Univ. of Fukui, 2.Osaka Munic. Tech. Res. Inst., 3.Osaka Univ.)

10:00 AM - 10:15 AM

[21a-W541-5] Mapping of ICP-etching induced damages on GaN surfaces using scanning internal photoemission microscopy

〇Hiroyoshi Imadate¹, Akihisa Terano¹, Kenji Shiojima¹ (1.Univ. of Fukui)

10:15 AM - 10:30 AM

[21a-W541-6] Optical properties of plasma-induced defects in GaN from photocapacitance

Rikito Orimo¹, Kenta Onishi¹, 〇Seiji Nakamura¹, Tsugunori Okumura¹ (1.Tokyo Metropolitan Univ.)

10:45 AM - 11:00 AM

[21a-W541-7] Impact of deep-level traps on depth profiling of homoepitaxial lightly-doped n-type GaN

〇Jun Suda¹, Masahiro Horita¹, Takuya Maeda², Naoki Sawada¹, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Faculty of Eng., Kyoto Univ.)

11:00 AM - 11:15 AM

[21a-W541-8] Wafer mapping of deep level trap concentration in homoepitaxial n-type GaN by capacitance transient measurement

〇Masahiro Horita¹, Tetsuo Narita², Tetsu Kachi², Tsutomu Uesugi², Jun Suda¹ (1.Kyoto Univ., 2.Toyota Central R&D Labs.)

11:15 AM - 11:30 AM

[21a-W541-9] Deep level transient spectroscopy of low–carrier concentration n-GaN layers grown on freestanding GaN substrates

〇Kenji Shiojima¹, Takeshi Tanaka^1,2, Tomoyoshi Mishima³, Yutaka Tokuda⁴ (1.Univ. of Fukui, 2.SCIOCS Ltd., 3.Hosei Univ., 4.Aichi Inst. Tech.)

11:30 AM - 11:45 AM

[21a-W541-10] Constant capacitance DLTS measurements of MOCVD n-GaN with high ratios of N_t/N_d

〇(M1)Shougo Ueda¹, Kazuki Miyamoto¹, Yutaka Tokuda¹ (1.Aichi Inst. of Tecnol.)

11:45 AM - 12:00 PM

△ [21a-W541-11] Relationship between dislocation and deep-level traps in GaN Schottky diode on GaN substrate

〇Suguru Mase¹, Yuya Urayama¹, Takashi Egawa¹ (1.NIT)

12:00 PM - 12:15 PM

△ [21a-W541-12] Photocurrent by Sub-Bandgap Wavelength Light Absorption due to Franz-Keldysh Effect in n-type GaN Schottky Barrier Diode under Large Reverse Bias

〇(B)Takuya Maeda¹, Masaya Okada², Masaki Ueno², Yoshiyuki Yamamoto², Masahiro Horita³, Jun Suda³ (1.Kyoto Univ., 2.Sumitomo Electric Industries,Ltd., 3.Dept. of Electron. Sci&Eng.,Kyoto Univ.)

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