Kenji Shiojima

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Speaker, Author, Co-Author

Mon. Mar 21, 2016 9:00 AM - 12:15 PM W541 (W5)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[21a-W541-1~12] 13.8 Compound and power electron devices and process technology

9:30 AM - 9:45 AM

[21a-W541-3] Displacement current of Au/p-type diamond Schottky contacts
- Compared with p-type GaN Schottky contacts -

〇Kenji Shiojima¹, Toshichika Aoki¹, Tokuyuki Teraji², Yasuo Koide² (1.Univ. of Fukui, 2.NIMS)

11:15 AM - 11:30 AM

[21a-W541-9] Deep level transient spectroscopy of low–carrier concentration n-GaN layers grown on freestanding GaN substrates

〇Kenji Shiojima¹, Takeshi Tanaka^1,2, Tomoyoshi Mishima³, Yutaka Tokuda⁴ (1.Univ. of Fukui, 2.SCIOCS Ltd., 3.Hosei Univ., 4.Aichi Inst. Tech.)