[21a-W541-1~12] 13.8 Compound and power electron devices and process technology

[21a-W541-3] Displacement current of Au/p-type diamond Schottky contacts
- Compared with p-type GaN Schottky contacts -

〇Kenji Shiojima¹, Toshichika Aoki¹, Tokuyuki Teraji², Yasuo Koide² (1.Univ. of Fukui, 2.NIMS)

Keywords:diamond,Schottky contact,displacement current

We characterized displacement currents in p-diamond and p-GaN Schottky contacts. We found both displacement current and memory effect in p-GaN samples and only displacement current in p-diamond samples. These results tell us that the diamond surface has less surface defects comparing with p-GaN.