Moe Naganawa

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Speaker, Author, Co-Author

Mon. Mar 21, 2016 9:00 AM - 12:15 PM W541 (W5)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[21a-W541-1~12] 13.8 Compound and power electron devices and process technology

9:15 AM - 9:30 AM

[21a-W541-2] Characterization of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates (2) --Effect of surface treatments--

〇Moe Naganawa¹, Toshichika Aoki¹, Tomoyoshi Mishima², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hosei Univ.)