Suguru Mase

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Speaker, Author, Co-Author

Mon. Mar 21, 2016 9:00 AM - 12:15 PM W541 (W5)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[21a-W541-1~12] 13.8 Compound and power electron devices and process technology

11:45 AM - 12:00 PM

△ [21a-W541-11] Relationship between dislocation and deep-level traps in GaN Schottky diode on GaN substrate

〇Suguru Mase¹, Yuya Urayama¹, Takashi Egawa¹ (1.NIT)