Seiji Nakamura

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 1:30 PM - 3:30 PM P9 (Gymnasium)

Poster presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[20p-P9-1~22] 13.8 Compound and power electron devices and process technology

1:30 PM - 3:30 PM

[20p-P9-9] Behavior of plasma-induced defects in n- and p-GaN

Yusuke Koga¹, Ryohei Inoue¹, 〇Seiji Nakamura¹, Tsugunori Okumura¹ (1.Tokyo Metropolitan Univ.)

Mon. Mar 21, 2016 9:00 AM - 12:15 PM W541 (W5)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[21a-W541-1~12] 13.8 Compound and power electron devices and process technology

10:15 AM - 10:30 AM

[21a-W541-6] Optical properties of plasma-induced defects in GaN from photocapacitance

Rikito Orimo¹, Kenta Onishi¹, 〇Seiji Nakamura¹, Tsugunori Okumura¹ (1.Tokyo Metropolitan Univ.)