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[21a-W541-5] Mapping of ICP-etching induced damages on GaN surfaces using scanning internal photoemission microscopy
Keywords:scanning internal photoemission microscopy,etching,n-GaN
We characterized ICP etching induced damages on n-GaN surfaces by scanning internal photoemission microscopy. The etching pattern was clearly visualized as a photo yield map. The induced damages were recovered upon annealing at 700 oC. We conformed that this technic can sensitively detect such surface damages.